Morphological and Optoelectrical Characterization of Silicon Nanostructures for Photovoltaic Applications
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Date
2019-02-07
Journal Title
Journal ISSN
Volume Title
Publisher
Research Gate
Abstract
Metal (silver)-Assisted Chemical Etching (MACE) method is used to fabricate silicon nanostructures like silicon nanowires (SiNWs) and silicon nanocones (SiNCs). The morphological characterization of fabricated SiNWs has shown that 5 minutes is the optimal time of silver deposition on silicon substrate. Silicon nanocones (SiNCs) were also fabricated by etching vertical SiNWs with a AgNO3/HF/H2O2 solution. The optical
and electrical properties of SiNWs and SiNCs are analyzed and compared with those of the bulk silicon. The fabricated SiNWs (SiNCs) reduce the surface reflectance and the sheet resistance down to 6% (3%) and 9.143 Ω/sq (6.997 Ω/sq) respectively.
Description
The energy demand worldwide is largely greater than the energy supply. Thus, the conventional energy sources (oil, coal and nuclear) become expensive.
Keywords
Silicon nanostructures, Metal assisted chemical etching, Optoelectrical characterization
Citation
Dieng, B., Toure,M., Beye, M., Kobor, D., Maiga, A.S. (2019) Morphological and Optoelectrical Characterization of Silicon Nanostructures for Photovoltaic Applications. Advances in Science, Technology and Engineering Systems Journal Vol. 4, No. 1, pp. 1-6. DOI: 10.25046/aj040106